Samsung has just announced a huge 1TB flash chip for next-generation devices.
1TB storage comes to Samsung phones
Samsung has just broken the 1TB threshold for on-device memory with the announcement of the industry’s first 1TB universal flash storage chip (eUFS). What’s more, it’s already in mass production. Exactly which device it will first appear in is not yet known, although the mobile buzz is getting underway ahead of the last MWC in February (the trade show officially known as Mobile World Congress) in Barcelona and they are confidently assigning it to the upcoming Galaxy Note 10.
The performance levels are quite astounding, especially when you consider that it comes only four years after the development of the first 128 GB eUFS chip, and has the same 11.5 x 13 mm form factor as the previous 512 GB version.
When it launched in November 2017, Samsung started marketing the phones as “1TB ready,” as the problem was that you had to insert a 512GB microSD card into the device to get to that level. However, there is no double entendre with the new drive, which is not only 1TB out of the box, but also boasts some pretty impressive performance stats.
The chip combines 16 stacked layers of Samsung’s fifth-generation 512GB V-NAND flash memory witha new controller that sees it achieve transfer speeds of 1000MBps. This, Samsung notes, is twice the sequential read speed of a typical 2.5in SATA SSD and approaches 10 times the speed of a typical microSD card. Random read speed is up to 58,000 IOPS (input/output operations per second), with random writes logging in at 50,000 IOPS. Sequential write speed is 260MBps.
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